CONFERENCE PROGRAM

ICAMS 18 - August 22-27, Snowbird, Utah, USA

Current Listing of Invited, Oral and Poster Presentations
(subject to change)
  


All abstracts are in .pdf format. To download a copy of Adobe Acrobat Reader click here. Click on on "free Adobe(R) Acrobat(R). Then click on the link for whatever operating system you are using (Windows 95, NT, etc.). Follow the instructions on your screen.


Sunday, August 22
Welcome Reception
6:30 p.m. - Snowbird Center Plaza
This is an open-air event with a wonderful view of the mountains and sunset over the Salt Lake Valley.

 
Monday, August 23
  
Plenary Session - Ballrooms 1, 2, 3
9:00 a.m.
Welcoming Remarks

9:20 a.m.
Mott Lecture (M1.1)- Martin Stutzmann (Garching, Germany)
Spin-Dependent Processes in Amorphous and Microcrystalline Semiconductors

10:20 a.m.
BREAK

Session A - Surface Reactions During Growth - Ballroom 1
10:50 a.m. - Invited
MA2.1 - G.N. Parsons (Raleigh, USA)
Surface Reactions During Very Low Temperature (<150oC) Plasma Deposition of a-Si:H and Applications in TFTs
11:30 a.m.
MA2.2 - H. Fujiwara, Y. Toyoshima, M. Kondo and A. Matsuda (Tsukuba, Japan)
Structural Study of Initial Layer for mc-Si:H Growth Using Real Time In Situ Spectroscopic Ellipsometry and Infrared Spectroscopy
11:50 a.m.
MA2.3 - Satoshi Yamasaki, Ujjwal K. Das, Takahide Umeda, Junichi Isoya and Kazunobu Tanaka (Tsukuba, Japan)
Creation and Annihilation Mechanism of Dangling Bonds of a-Si:H Growth Surface Studied by In Situ ESR Technique
12:10 p.m.
MA2.4 - Wataru Futako, Toshio Kamiya, Charles M. Fortmann and Isamu Shimizu (Yokohama, Japan)
The Structure of 1.5 to 2.1 eV Band Gap Amorphous Silicon Films Prepared by Chemical Annealing

Session B - Chalcogenide Glasses: Band Tail States and Defects - Ballroom 2
10:50 a.m.
MB2.1 - Keiji Tanaka (Sapporo, Japan)
Sub-Gap Excitation Effects in As2S3 Glass
11:10 a.m.
MB2.2 - T. Ohno and K. Shimakawa (Gifu, Japan)
Dynamics of Band Tail Holes in Amorphous As2Se3 Direct Measurement of Hopping Relaxation Time
11:30 a.m.
MB2.3 - Ashtosh Ganjoo, Y. Ikeda, and K. Shimakawa (Kyoto, Japan)
In Situ Measurements of Photo-induced Volume Changes in Amorphous Chalcogenide Films
11:50 a.m.
MB2.4 - E.V. Emelianova, H.-Z. Song, V.I. Arkhipov, and G.J. Adriaenssens (Leuven, Belgium)
Experimental Evidence for Long-Range Potential Fluctuations in a-Se Films
12:10 pm.
MB2.5 - P. Hari, C. Cheney, Z. Marka, M.M. Albert, and N.H. Tolk (Nashville, USA)
Wavelength Selective Materials Modification of Chalcogenide Glasses By Free Electron Laser (FEL) Irradiation

Session C - Electronic and Atomic Structure of a-Si:H - Ballroom 3
10:50 a.m.
MC2.1 - S.B. Zhang and Howard M. Branz (Golden, USA)
Low-Barrier Hydrogen Dissociation in Silicon: Non-Radiative Electron-Hole Recombination Pathway
11:10 a.m.
MC2.2 - R. Biswas, Y.-P. Li (Ames, USA)
Metastability in Amorphous Silicon from Hydrogen Flips
11:30 a.m.
MC2.3 - K. Shimakawa (Gifu, Japan)
Percolation-Controlled Electronic Properties in Microcrystalline Silicon: Effective Medium Approach
11:50 a.m. - Invited
MC2.4 - David Drabold (Athens, USA)
Atomic Level Calculations of Electronic Structure in Amorphous Si

12:30
LUNCH

Session A - Amorphous Carbon - Ballroom 1
2:00 p.m.
MA3.1 - Valerie Paret and Marie-Luce Theye (Paris, France)
Influence of Disorder on the Density of p and s States in Hydrogenated Amorphous Carbon
2:20 p.m.
MA3.2 - B. Bouchet, J. Dixmier, T. Heitz, J.E. Bouree and C. Godet (Orsay, France)
X-Ray Diffraction Investigation of Polymer-Like Hydrogenated Amorphous Carbon Films
2:40 p.m.
MA3.3 - A.C. Ferrari, B. Kleinsorge, G. Adamopoulos, J. Robertson, W.I. Milne, V. Stojolan, L.M. Brown and A. LiBassi (Cambridge, UK)
Determination of Bonding in Amorphous Hydrogenated Carbons by EELS, Raman and X-Ray Reflectivity
3:00 p.m.
MA3.4 - Jun Xu, Tianfu Ma, Wei Li, Kunji Chen, Jiafang Du, and Xinfan Huang (Nanjing, China)
Novel Luminescence Characteristics of a-C:H Films Produced By using an Organic Source at Different Substrate Temperatures
3:20 p.m.
MA3.5 - M.N. Berberan-Santos, A. Fedorov, T. Heitz, C. Godet, J.E. Bouree and J.P. Conde (Lisbon, Portugal)
Time-Resolved Study of Photoluminescence Polarization in a-C:H Films

Session B - Optical Sensors - Ballroom 2
2:00 p.m.
MB3.1 - J. Zimmer, H. Stiebig and H. Wagner (Juelich, Germany)
Thin Film Detector for Color Recognition: An Experimental and Numerical Study
2:20 p.m.
MB3.2 - F. Sousa, J Martins, M. Fernandes, P. Louro, A. Macarico and M. Vieira (Lisbon, Portugal)
Contact Geometry Optimization in a mc-Si:H p-i-n Image Transducer
2:40 p.m.
MB3.3 - F. Lemmi, J.T. Rahn and R.A. Street (Palo Alto, USA)
Lateral Conduction in Structured Amorphous Silicon p+-i-n+ Photodiodes
3:00 p.m.
MB3.4 - Marko Topic, Helmut Stiebig, Dietmar Knipp, Franc Smole, Joze Furlan, and Heribert Wagner (Ljubljana, Slovenia)
Transient Behavior of pinip Structures in Three-Terminal a-Si:H Based Three-Color Detectors
3:20 p.m.
MB3.5 - E. Fortunato, I. Ferreira and R. Martins (Lisbon, Portugal)
New Ultralight Flexable Large Area Thin Film Position Sensitive Detector Based on Amorphous Silicon

Session C - Size Effects - Ballroom 3
2:00 p.m. - Invited
MC3.1 - Toshikazu Shimada (Tokyo, Japan)
Single Electron Effects in Silicon Nano-Materials and Potential Applications
2:40 p.m.
MC3.2 - D.M. Wolfe and G. Lucovsky (Raleigh, USA)
Formation of Nano-Crystalline Si By Thermal Annealing of SiOx, SiCx and SiOyCx Amorphous Alloys: Model Systems for Advanced Device Processing
3:00 p.m.
MC3.3 - Xinwei Zhao, Shuji Komuro, Shintaro Nomura, Yoshinobu Aoyagi and Takuo Sugano (Saitama, Japan)
Evidence of Quantum Size Effect in Si Nanocrystallites Formed in a-Si Matrix
3:20 p.m.
MC3.4 - Y. Hirano, F. Sato, N. Saito, M. Abe, S. Miyazaki and M. Hirose (Tokyo, Japan)
Fabrication of Si Nanodot Multilayers and Their Photoluminescence Properties

3:40 p.m.
BREAK

Session A - Metastability - Ballroom 1
4:00 p.m.
MA4.1 - K. Shimizu, K Hattori, J. Hanna and H. Okamoto (Yokohama, Japan)
Photoinduced Structural Change and Restoration of Hydrogenated Amorphous Silicon
4:20 p.m.
MA4.2 - N. Hata, P. Stradins, C.M. Fortmann, H. Fujiwara, M. Kondo and A. Matsuda (Tsukuba, Japan)
Light-Induced, Reversible, Above-Gap, Optical Changes in Hydrogenated Amorphous Silicon Films
4:40 p.m.
MA4.3 - Shenlin Chen and P.C. Taylor (Salt Lake City, USA)
Metastable Defects in a-SiSex:H Alloys
5:00 p.m.
MA4.4 - H. Amekura, N. Kishimoto, K. Kono and A. Kondo (Tsukuba, Japan)
Persistent Excited Conductivity and the Threshold Fluence in a-Si:H Under 17 MeV Proton Irradiation
5:20 p.m.
MA4.5 - S.P. Lau and J.M. Shannon (Nanyang, Singapore)
Generation and Annealing Kinetics of Current Induced Metastable Defects in Amorphous Silicon Alloys

Session B - Poly-Silicon Thin Film Transistors - Ballroom 2
4:00 p.m. - Invited
MB4.1 - Ping Mei, Jim Boyce, Jengping Lu, Jeff Rahn, Jackson Ho and Ron Fulks (Palo Alto, USA)
Pulsed Laser Crystallization and Doping of Thin Film Transistors
4:40 p.m.
MB4.2 - M. Mulato, Y. Chen and S. Wagner (Princeton, USA)
Microcrystalline Silicon with High Channel Mobility Deposited at 250oC
5:00 p.m.
MB4.3 - Kyung Wook Kim, Kyu Sik Cho and Jin Jang (Seoul, Korea)
Performace Improvement of Polycrystalline Thin Film Transistor by Adopting a Very Thin a-Si:H Buffer
5:20 p.m.
MB4.4 - R.T. Fulks, J. Ho and J.B. Boyce (Palo Alto, USA)
Low Temperature Amorphous Silicon of Laser Crystallized Polysilicon TFT's

Session C - Amorphous Alloys - Ballroom 3
4:00 p.m.
MC4.1 - Kimon C. Palinginis, J.D. Cohen, Jeffrey C. Yang and Subhendu Guha (Eugene, USA)
Defect Bands in a-Si-Ge:H Alloys with Low Ge Content
4:20 p.m.
MC4.2 - C. Tzoumanekas and P.C. Kelires (Heraclion, Greece)
Segregation, Clustering, and Suppression of Phase Separation in Amorphous Silicon-Germanium Alloys
4:40 p.m.
MC4.3 - R. Janssen, A. Janotta and M. Stutzmann (Garching, Germany)
Thermal Stability of Doped Amorphous Silicon Suboxides
5:00 p.m.
MC4.4 - W. Beyer (Juelich, Germany)
Infrared Absorption and Hydrogen Effusion of Hydrogenated Amorphous Silicon-Oxide Films
5:20 p.m.
MC4.5 - P.M. Lenahan, Jeremy Mele, Michael Fattu, R.K. Lowry and Dustin Woodbury (University Park, USA)
Dangling Bond Centers and Leakage Currents in Amorphous SiO2 Films


Tuesday, August 24

Session A - Defect Equilibration - Ballroom 1
9:00 a.m.
TuA1.1 - R.B. Wehrspohn, S.C. Deane, I.D. French and M.J. Powell (Surrey, UK)
Effect of Amorphous Silicon Material Properties on the Stability of Thin Film Transistors: Evidence for a Local Defect Creation Model
9:20 a.m.
TuA1.2 - Pratima Agarwal and S.C. Agarwal (Kanpur, India)
Influence of Variation of Lithium Concentration on Metastabilities in a-Si:H (Li)
9:40 a.m.
TuA1.3 - R.A.C.M.M. van Swaaij, V. Nadazdy, M. Zeman, E. Pincik and J.M. Metselaar (Delft, The Netherlands)
Defect Re-Distribution in Amorphous Silicon Below the Equilibration Temperature
10:00 a.m.
TuA1.4 - Richard S. Crandall (Golden, USA)
Charge Trapping Metastability in Hydrogenated Amorphous Silicon
10:20 a.m.
TuA1.5 - B. Stannowski and R.E.I. Schropp (Utrecht, The Netherlands)
Metastability of Hot-Wire Amorphous Silicon Thin Film Transistors

Session B - Novel Device Processing - Ballroom 2
9:00 a.m. - Invited
TuB1.1 - M. Boucinha, V. Chu and J.P. Conde (Lisbon, Portugal)
Applications of Thin Film Microelectromechanical Devices
9:40 a.m.
TuB1.2- H. Talaat, S. Negm, H.E. Schaffer, G. Kaltsas and A.G. Nassiopoulos (Cairo, Egypt)
Micro-Raman Analysis of Polysilicon Membranes Deposited on Micromachined Tunnels
10:00 a.m.
TuB1.3 - J.P. Lu, P. Mei, J. Rahn, Y. Wang, J.B. Boyce and R.A. Street (Palo Alto, USA)
The Impact of Self-Aligned Amorphous Si TFTs on Imager Array Applications
10:20 a.m.
TuB1.4 - Hyun-Chul Jin, John R. Abelson, Martin K. Erhardt and Ralph G. Nuzzo (Urbana, USA)
Hydrogenated Amorphous Silicon Thin Film Transistors Fabricated by a Soft Lithography

Session C - Nanocrystals - Ballroom 3
9:00 a.m.
TuC1.1 - W. Bronner, R. Bruggemann and M. Mehring (Stuttgart, Germany)
Standard and Electrically Detected Magnetic Resonance in Nanocrystalline Silicon
9:20 a.m.
TuC1.2 - Toshihiko Toyama, Yoshihiro Kotani, Akihito Shimode, Satoshi Abo and Hiroaki Okamoto (Osaka, Japan)
Fundamental Gap of Luminescent Nanocrystalline Silicon Thin Films
9:40 a.m.
TuC1.3 - H. Shirai, C. Fukai and Y. Moriya (Saitama, Japan)
Growth Kinetics of Nanocrystalline Silicon from SiH2Cl2 and H2
10:00 a.m.
TuC1.4 - M. Zacharias, J. Bläsing, P. Veit, L. Tsybeskov, K. Hirschman and P.M. Fauchet (Magdeburg, Germany)
Extraordinary Crystallization Behavior of Amorphous Nanocrystalline Si/SiO2 Superlattices
10:20 a.m.
TuC1.5 - M.D. Efremov, V.V. Bolotov, V.A. Volodin, A.V. Vishnyakov, O.K. Shabanova, S.A. Kochubei and L.I. Fedina (Novosibirsk, Russia)
Optical and Electrical Properties of a System of Silicon Nanocrystals Self-Organized and Self-Oriented by Excimer Laser Pulses in a-Si Films on Glass Substrates

10:40 a.m.
BREAK

Session A - Growth of Hydrogenated Amorphous Silicon - Ballroom 1
11:10 a.m.
TuA2.1 - A.J. Flewitt, J. Robertson and W.I. Milne (Cambridge, UK)
Experimental Evidence for an Inhomogeneous Surface Dangling Bond Limited Growth Mechanism for a-Si:H
11:30 a.m.
TuA2.2 - M. Takai, T. Takagi, M. Kondo and A. Matsuda (Tsukuba, Japan)
Guiding Principle For Obtaining Highly Stabilized Amorphous Silicon at High Growth Rate
11:50 a.m.
TuA2.3 - Seiichi Miyazaki, Nobuki Fukuhara and Masataka Hirose (Hiroshima, Japan)
Surface-Sensitive Raman Scattering Study on a-Si:H Network Formation Process During Deposition and H2 Plasma Annealing
12:10 p.m.
TuA2.4 - Vikram L. Dalal, Xi Huang and Vesa-Pekka Lempinen (Ames, USA)
Growth and Properties of a-Si:H Materials and Devices Prepared Using Physical and Chemical Annealing

Session B - Semiconducting Polymers - Ballroom 2
11:10 a.m. - Invited
TuB2.1 - Richard Friend (Cambridge, UK)
Polymer Light-Emitting Diodes
11:50 a.m.
TuB2.2 - P. Horvath, F. Schauer, S. Nespurek and J. Zemek (Brno, Czech Republic)
Luminescence as a Tool for Crosslinking Determination in Plasma Polysilanes Prepared from Organosilanes
12:10 p.m.
TuB2.3 - S. Reynolds, J.T. Shepherd and C. Main (Dundee, UK)
A Comparative Study of Photoconductivity and Carrier Transport in Oligomeric Thin Films
12:30 p.m.
TuB2.4 - J. Ramsbrock, J. Hajto, A. Werninck and Z. He (Edinburgh, UK)
Steady State and Transient Behaviour of Novel Blue Light Emitting Metal-Polymer-Metal Electroluminescent Structures

Session C - Heterostructures and Grain Boundaries - Ballroom 3
11:10 a.m.
TuC2.1 - E. Bohmer, H. Wagner and H. Luth (Juelich, Germany)
Photoelectron Spectroscopy Studies of the Microcrystalline/Amorphous Silicon Interface
11:30 a.m.
TuC2.2 - Max Roesch, Thomas Unold and Gottfried H. Bauer (Oldenburg, Germany)
Defects and Transport in a-Si:H/c-Si Heterojunctions
11:50 a.m.
TuC2.3 - B. Rezek, C.E. Nebel and M. Stutzmann (Prague, Czech Republic)
Correlation of Photoconductivity and Structure of Microcrystalline Silicon Thin Films with Submicron Resolution
12:10 p.m.
TuC2.4 - A. Fejfar, B. Rezek, P. Knapek, J. Stuchlik and J. Kocka (Prague, Czech Republic)
Local Electronic Transport in Microcrystalline Silicon Observed by Combined AFM Measuments

12:30 p.m.
LUNCH

Session A - Hydrogen in Amorphous and Microcrystalline Silicon - Ballroom 1
2:00 p.m.
TuA3.1 - Tining Su, P.C. Taylor, Shenlin Chen, R.S. Crandall and A.H. Mahan (Salt Lake City, USA)
Molecular Hydrogen in Amorphous Silicon Revisited
2:20 p.m.
TuA3.2 - Jonathan Baugh, Daxing Han, Qi Wang and Yue Wu (Chapel Hill, USA)
Microstructure and Dynamics of Hydrogen in a-Si:H Studied by NMR
2:40 p.m.
TuA3.3 - J.K. Rath, R.E.I. Schropp and W. Beyer (Utrecht, The Netherlands)
Hydrogen at Compact Sites in Hot-Wire CVD Poly-Silicon Films
3:00 p.m.
TuA3.4 - K. Yamamoto, T. Itoh, H. Harada, K. Ushikoshi, S. Nonomura and S. Nitta (Gifu, Japan)
Characterization and Role of Hydrogen in nc- Si:H
3:20 p.m.
TuA3.5 - M. van der Voort, C.W. Rella, A.F. G van der Meer, A.V. Akimov and J.I. Dijkhui (Utrecht, The Netherlands)
Ultrafast Infrared Experiments on Si-H Vibrations in a-Si:H

Session B - Solar Cells - Ballroom 2
2:00 p.m. - Invited
TuB3.1 - Kenji Yamamoto, Masashi Yoshimi, Yuko Tawada, Yoshifumi Okamoto and Akihiko Nakajima (Kobe, Japan)
Thin Film Si Solar Cell Fabricated at Low Temperature
2:40 p.m.
TuB3.2 - C. Eisele, C.E. Nebel, and M. Stutzmann (Garching, Germany)
Spatially Resolved Photocurrent Measurments of Microstructured a-Si:H Solar Cells
3:00 p.m.
TuB3.3 - H. Stiebig, J. Zimmer, T. Brammer, O. Vetterl, F. Finger and H. Wagner (Juelich, Germany)
Investigation of the Optoelectric Properties of mc-Si:H pin Solar Cells
3:20 p.m.
TuB3.4 - R.E.I. Schropp, J.K. Rath and F.A. Rubinelli (Utrecht, The Netherlands)
Role of Oxidation Treatment at the Microcrystalline Tunnel Junction of a-Si:H/a-Si:H Tandem Cells

Session C - Erbium Luminescence - Ballroom 3
2:00 p.m.
TuC3.1 - L.R. Tessler, C. Piamonteze, M.C. Martins Alves and H. Tolentino (Campinas, Brazil)
Evolution of the Er Environment in a-Si:H Under Annealing: Ion Implantation Versus Co-Deposition
2:20 p.m.
TuC3.2 - H. Kuhne, G. Weiser and I.E. Terukov (Marburg, Germany)
Non-Radiative Energy Transfer to Radiative Centres (Er3+) in a-Si1-xCx:H
2:40 p.m.
TuC3.3 - S.B. Aldabergenova, M. Albrecht, G. Frank, H.P. Strunk, A.A. Andreev, A. Yu. Davydov, J. Viner and P.C. Taylor (Erlangen, Germany)
Energy Transfer Processes From Amorphous GaN and AlN Hosts to Rare Earth Intra-Shell Emitters
3:00 p.m.
TuC3.4 - M.S. Bresler, O.B. Gusev, W. Fuhs, E.I. Terukov, K.D. Tsendin and I.N. Yassievich (St. Petersburg, Russia)
Mechanism of Erbium Electroluminescence in Amorphous Hydrogenated Silicon
3:20 p.m.
TuC3.5 - Atsushi Masuda, Joe Sakai and Hideki Matsumura (Ishikawa, Japan)
Novel Deposition Technique of Er-Doped a-Si:H Combining Catalytic CVD and Pulsed Laser Ablation

3:40 p.m.
BREAK

7:30 p.m. POSTERS

P1 - Growth and Crystallization of Silicon
TuP1.1
A. Fontcuberta i Morral, R. Brenot, E.A.G. Hamers, R. Vanderhaghen and P. Roca i Cabarrocas (Palaiseau, France)
In Situ Investigation of Polymorphous Silicon During Growth
TuP1.2
Y. Kanemitsu, H. Tanaka, S. Mimura, T. Kushida, K.S. Min and H.A. Atwater (Nara, Japan)
Structural and Optical Properties of GaAs Nanocrystals in SiO2 Films
TuP1.3
S. Lust, I. Sieber, W. Henrion, J.K. Dohrmann, W. Fuhs and J. Rappich (Berlin, Germany)
High Efficent Light Trapping by Formation of Nanowire-like Structures on mc-Si Thin Films
TuP1.4
C. Summonte, R. Rizzoli, A. Desalvo, F. Zignani, E. Centurioni and R. Pinghini (Bologna, Italy)
Very High Frequency Hydrogen Plasma Treatment of Growing Surfaces: A Comprehensive Study of the P-Type Amorphous to Microcrystalline Silicon Transition
TuP1.5
Jae-Hong Jeon, Kee-Chan Park, Min-Cheol Lee and Min-Koo Han (Seoul, Korea)
Two Step Laser Recrystallization of Poly-Si for Effective Control of Grain Boundaries
TuP1.6
Toshihisa Kitagawa, Michio Kondo and Akihisa Matsuda (Tsukuba, Japan)
In Situ Observation of Low Temperature Growth of Crystalline Silicon Using Reflection High-Energy Electron Diffraction
TuP1.7
P. delli Veneri, C. Privato and E. Terzini (Portici, Italy)
Changes of Hydrogen Evolution Thermodynamics Induced by He and H2 Dilution in PECVD a-Si:H Films: Influence on Thermal Crystallization
TuP1.8
Akira Heya, Atsushi Masuda and Hideki Matsumura (Ishikawa, Japan)
Mechanism of Low-Temperature Crystallization of Amorphous Silicon by Atomic Hydrogen Annealing
TuP1.9
B. Rezek, C.E. Nebel and M. Stutzmann (Prague, Czech Republic)
Interference Laser Crystallization of Microcrystalline Silicon Using Asymmetric Beam Intensities
TuP1.10
Mutsuko Hatano, Seung- Jae Moon, Ming-Hong Lee, Kenkichi Suzuki and Costas P. Grigoropoulos (Tokyo, Japan)
In-Situ and Ex-Situ Diagnostics on Melting and Resolidification Dynamics of Amorphous and Polycrystalline Silicon Thin Films During Excimer Laser Annealing
TuP1.11
B. Schroder and S. Bauer (Kaiserslautern, Germany)
Some Indications of Different Film Forming Radicals in a-Si:H Deposition by the Glow Discharge and Thermocatalytic CVD Processes
TuP1.12
Soo Young Yoon, Seong Jin Park, Kyung Ho Kim, Chae Ok Kim and Jin Jang (Seoul, Korea)
Electric Field Enhanced Crystallization of Amorphous Silicon at 400oC

P2 - Thin Film Transistors
TuP2.1
F.G. Della Corte, T. Polichetti, A. Rubino and G. Cocorullo (Naples, Italy)
Study of the Injection Efficiency in an a-Si:H(p+)/GaAs(n) Heterojunction for Bipolar Device Applications
TuP2.2
Byung Cheon Lim, Young Jin Choi, In Keun Woo and Jin Jang (Seoul, Korea)
Low Photo-Leakage Current Amorphous Silicon Thin-Film Transistor with a Thin Active Layer
TuP2.3
Cheon-Hong Kim, Juhn-Suk Yoo, Sang-Hoon Jung and Min-Koo Han (Seoul, Korea)
Simple Fabrication of Offset-Gated Poly-Si TFTs by In Situ Fluorine Passivation and Excimer-Laser Doping
TuP2.4
J. Puigdollers, A. Orpella, R. Alcubilla, D. Dosev, J. Pallares, C. Voz, D. Peiro, J. Bertomeu and J. Andreu (Barcelona, Spain)
Thin Film Transistors Obtained by Hot Wire CVD
TuP2.5
Y. Chen, K. Pangal, J.C. Sturm and S. Wagner (Princeton, USA)
P-Channel Microcrystalline Silicon Thin Film Transistor Fabricated at 320oC
TuP2.6
Benedict Popescu, Martin Hundhausen and Lothar Ley (Leicester, UK)
Study of Space-Charge-Limited Currents in High Voltage TFTs
TuP2.7
A. Rahal, T. Mohammed-Brahim, M. Sarret, O. Bonnaud and J.P. Kleider (Rennes, France)
Low Temperature Polycrystalline Silicon Thin Film Transistors
TuP2.8
Jai Il Ryu, Young Jin Choi, In Keun Woo, Byeong Chun Lim and Jin Jang (Seoul, Korea)
High Performance a-Si:H TFT with ITO/n+ Ohmic Layer Using a Ni-Silicide
TuP2.9
Jae Beom Choi, Duk Chul Yun, Yong In Park, Jeong Hyun Kim and Hoe Sup Soh (Kyonggi-do, Korea)
Characteristics of Hydrogenated Amorphous Silicon Thin Film Transistors Fabricated at 150oC by PECVD
TuP2.10
F. Schauer, I. Zhivkov and S. Nespurek (Brno, Czech Republic)
Organic Phthalocyanine Films with High Mobilities for Efficient FET Switches

P3 - Hydrogen and Metastability
TuP3.1
Arthur Yelon, Howard M. Branz and Hellmut Fritzsche (Montreal, Canada)
Electron Beam Creation of Metastable Defects in Hydrogenated Amorphous Silicon in the Framework of the Hydrogen Collision Model
TuP3.2
S. Gupta, R.S. Katiyar, S.Z. Weisz and I. Balberg (Rio Piedras, Puerto Rico)
The Effect of Light Soaking on the Structural Order in a-Si:H
TuP3.3
Minoru Kumeda, Masaharu Miura and Tatsuo Shimizu (Kanazawa, Japan)
Photocreation Processes for Neutral Dangling Bonds in a-Ge-N:H Compared with a-Si-N:H
TuP3.4
A.S. Abramov, A.I. Kosarev and P. Roca i Cabarrocas (St. Petersburg, Russia)
Kinetics of Defects and Electron, Hole Diffusion Lengths During Light Soaking and Consequent Annealing
TuP3.5
K. Imagawa, K. Shimakawa and A. Kondo (Gifu, Japan)
Effect of Hole Accumulation on Photodegradation in a-Si:H
TuP3.6
R.M. Mehra, Jasmina, L.P. Purohit, R. Kumar, A.V. Singh, P.C. Mathur and P.C. Taylor (New Delhi, India)
Optical Properties of High Bandgap Se- and S-Doped Amorphous Hydrogenated Silicon
TuP3.7
Jong-Hwan Yoon (Chunchon, Korea)
Hindering the Light-Induced Instability in a-Si:H by Hydrogen Clusters
TuP3.8
T. Sakamoto, S. Nonomura, T. Gotoh, M. Kondo, M. Nishio, H. Harada, T. Itoh, A. Matsuda and S. Nitta (Gifu, Japan)
A Study on the Correlation Between the Photoinduced Volume Expansion and the Internal Stress in Hydrogenated Amorphous Silicon
TuP3.9
C.L. Spiel, Xiao Liu, B.E. White, Jr., R.O. Pohl, E. Iwanichzko and R.S. Crandall (Ithaca, USA)
Low Temperature Relaxation in Crystalline and Microcrystalline Silicon
TuP3.10
Stephan Heck and Howard M. Branz (Golden, USA)
Reduced Degradation of Hydrogenated Amorphous Silicon Under Pulsed Illumination
TuP3.11
Yoram Lubianiker, Yanyang Tan, J. David Cohen and Gautam Ganguly (Eugene, USA)
Stability of Amorphous Silicon Grown at the Onset of Microcrystallinity
TuP3.12
N.H. Nickel and I. Kaiser (Berlin, Germany)
Influence of Dopants on the Diffusion Properties of Hydrogen in Microcrystalline and Polycrystalline Silicon
TuP3.13
A.H. Mahan, W. Beyer, D.L. Williamson, J. Yang and S. Guha (Golden, USA)
An Explanation for the Low Temperature H Evolution Peak in a-Si:H Deposited 'On the Edge of Crystallinity'
TuP3.14
W. Beyer and U. Zastrow (Juelich, Germany)
Comparative Study of Hydrogen Stability in Hydrogenated Amorphous and Crystalline Silicon

P4 - Chalcogenide Glasses I
TuP4.1
M. Mitkova and P. Boolchand (Cincinnati, USA)
Glass Formation and Molecular Structure in the Ag-Ge-S (Se) Ternary Systems
TuP4.2
Victor Boev, Maria Mitkova, Elefteria Lefterova, Tomas Wagner, S. Kasap and Miroslav Vlcek (Sofia, Bulgaria)
Investigation of Glass Formation and Selected Physico-Chemical Properties of Glassy Materials in the Ge-Se-AgI System
TuP4.3
G.J. Adriaenssens, A. Gheorghiu-de La Rocque, E. Berlin-Ferre and P. Hertogen (Leuven, Belgium)
The Electronic Structure of Cu-Modified Arsenic Chalcogenides
TuP4.4
P.K. Dwivedi, S.K. Tripathi. A. Pradhan, V.N. Kulkarni and S.C. Agarwal (Kanpur, India)
Raman Study of Ion Irradiated GeSe Thin Films
TuP4.6
Y. Wang, T. Komamine, T. Nakaoka, O. Matsuda, K. Inoue, and K Murase (Osaka, Japan)
Effect of Thermal Annealing On Dynamics of Photoluminescence in a-GeSe2 Films
TuP4.7
Dione Fagundes de Sousa, Luiz Fernando Costa Zonetti, Juraci Aparecido Sampaio, Luiz Antonio de Oliveira Nunes, M.L. Baesso, A.C. Bento and L.C.M. Miranda (Sao Carlos, Brazil)
Optical Spectroscopy of Er3+Yb3+ Codoped Calcium Aluminate Glasses
TuP4.8
B. Frumarova, P. Nemec and M. Frumar (Pardubice, Czech Republic)
The Structure and Optical Properties of Pr3+ Doped Ge-Ga-Se Glasses
TuP4.9
Sh.Sh. Sarsembinov, O. Yu. Prikhodko, A.P. Ryaguzov and S. Ya. Maksimova (Almaty, Kazakstan)
Short-Range Order and Electronic Properties of As-Se Amorphous Films
TuP4.10
A. Perakis, I.P. Kotsalas, V.K. Tikhomirov and C. Raptis (Athens, Greece)
Raman Scattering from Ge-S-I Glasses

P5 - Luminescence in Silicon
TuP5.1
I. Umezu, K. Yoshida, A. Sugimura, T. Inokuma, S. Hasegawa, Y. Wakayama, Y. Yamada and T. Yoshida (Kobe, Japan)
A Comparative Study of Photoluminescence Properties of a-SiOx:H Films with Silicon Nanocrystallites
TuP5.2
K. Luterova, P. Fojtik, A. Poruba, J. Dian, J. Valenta, O. Salyk, J. Horvath, M. Nikl, J. Kocka and I. Pelant (Prague, Czech Republic)
Light Emitting Wide Band Gap a-Si:H Deposited by Microwave Electron-Cyclotron-Resonance Plasma-Enhanced Chemical Vapour Deposition
TuP5.3
F. Giorgis, P. Rava, C. Mazzoleni and L. Pavesi (Torino, Italy)
Optical and Luminescence Analysis of Wide-Band Gap Amorphous Silicon Based Alloys
TuP5.4
Guozhen Yue, Xunming Deng, G. Ganguly and Daxing Han (Chapel Hill, USA)
Electro- and Photo-Luminescence Spectra From a-Si and a-Si:Ge p-i-n Solar Cells
TuP5.5
N. Schultz, B. Yan, A. Efros and P.C. Taylor (Salt Lake City, USA)
Low-Temperature Recombination Kinetics of Long-Lived Charge Carriers in a-Si:H
TuP5.6
Leandro R. Tessler and Ana Carola I¤iguez (Campinas, Brazil)
Optimization of the As-Deposited 1.54 mm Photoluminescence Intensity in a-SiOx:H(Er)
TuP5.7
M. Zacharias, St. Richter and E. Wendler (Magdeburg, Germany)
Room Temperature Luminescence of Erbium Doped Nanocrystalline Si/SiO2 Superlattices
TuP5.8
H. Nakata, K. Murayama, S. Miyazaki and M. Hirose (Tokyo, Japan)
Luminescence and Absorption Edge of a-Ge:H Well Layers in a-Si:H/a-Ge:H Multilayers
TuP5.9
E.I. Terukov, O.I. Konkov, V. Kh. Kudoyarova, K.V. Koughia, G. Weiser, H. Kuehne, J.P. Kleider, C. Longeaud and R. Bruggemann (St. Petersburg, Russia)
Erbium Incorporation in Plasma-Deposited Amorphous Silicon
TuP5.10
A.R. Zanatta, M.J.V. Bel and L.A.O. Nunes (Sao Carlos, Brazil)
1.54 mm Photoluminescence from Er-Doped a-GaAsN Alloys
TuP5.11
N.A. Feoktistov, V.G. Golubev, N.I. Gorshkov, A.V. Medvedev, A.B. Pevtsov and D.N. Suglobov (St. Petersburg, Russia)
a-Si(Er):H Films Prepared by Metalorganic Assisted PECVD with Highly Hydrogen Diluted Silane
TuP5.12
G.A. Mensing, J.M. Gilligan, P. Hari, N.H. Tolk and P.C. Taylor (Nashville, USA)
Midgap Defect States in Hydrogenated Amorphous Silicon from Photoluminescence Excitation Spectroscopy

P7 - Amorphous Alloys
TuP7.1
V.N. Bogomolov, N.A. Feoktistov, V.G. Golubev, J.L. Hutchison, D.A. Kurdyukov, A.B. Pevtsov, J. Sloan and L.M. Sorokin (St. Petersburg, Russia)
3D Array of Silicon Nanoscale Elements in Artificial SiO2 Opal Host
TuP7.2
R. Therrien, G. Lucovsky and R.F. Davis (Raleigh, USA)
Local Atomic Structure of Amorphous Ga2O3 and at Internal Dielectric Ga2O3/SiO2 Interfaces: Formation for Low Defect Density GaN-Ga2O3/SiO2 Heterointerface Dielectrics by 300oC Remote Plasma-Assisted Processing
TuP7.3
ZhenHong He, Jun Xu, Kunji Chen and Duan Feng (Nanjing, China)
Crystallization and Oxidation Process of nc-Ge in a-SiO2 Matrix from a-Si:H/a-Ge:H Mulitlayers
TuP7.4
Samadhan B. Patil, Alka A. Kumbhar and R.O. Dusane (Bombay, India)
Low Temperature Silicon Nitride Alloy Films with Very High Breakdown Voltage Prepared by Hot Wire CVD Technique
TuP7.5
Mei Zhang, Lujun Pan and Yoshikazu Nakayama (Osaka, Japan)
Structural Modifications of Hydrogenated Amorphous Carbon Nitride Due to Ultraviolet Light Irradiation and Thermal Annealing
TuP7.6
R. Campomanes, D. Comedi and I. Chambouleyron (Campinas, Brazil)
Microstructure, Void Size Distribution, and Infrared Spectra of Ge-Rich Germanium-Nitrogen Alloys
TuP7.7
J.A. Schmidt, M. Hundhausen and L. Ley (Erlangen, Germany)
Transport Properties of Amorphous Hydrogenated Silicon-Carbon Alloys
TuP7.8
M.N.P. Carreno and I. Pereyra (Sao Paulo, Brazil)
P-Type Doping in a-Si1-xCx:H Obtained by PECVD
TuP7.9
J. Seekamp, J. Niemann and W. Bauhofer (Hamburg, Germany)
PECVD a-SiC:H Thin Films from Liquid Organosilanes: Dependence of Photoluminescence on Starting Material
TuP7.10
K. Shimizu, S. Sano and J. Hanna (Yokohama, Japan)
Photo-Electrical Properties of Thermal CVD Poly-SiGe Thin Films Prepared at 450oC
TuP7.11
Vikram L. Dalal, Sohail Haroon, Kay Han and Tim Maxson (Ames, USA)
Influence of Plasma Chemistry on the Properties of a-(Si,Ge):H Materials and Devices
TuP7.12
D. Guillet, M. Sarret, L. Haji, T. Mohammed-Braihm, F. Le Bihan and O. Bonnaud (Rennes, France)
Low Temperature Fabrication and Properties of LPCVD Polycrystalline Silicon-Germanium Films
TuP7.13
B.G. Budaguan, A.A. Sherchenkov, G.L. Gorbulin, A.A. Berdnikov and A.A. Aivazov (Moscow, Russia)
The Properties of a-SiGe:H Films Deposited by 55 kHz PECVD
TuP7.14
Jason Herrold and Vikram L. Dalal (Ames, USA)
Growth and Properties of Microcrystalline Germanium-Carbide Alloys Grown Using ECR Plasma Processing
TuP7.15
Brent. P Nelson, Yueqin Xu, Alice Mason, Robert Reedy, John Webb, Lynn Gedvilas and William A. Lanford (Golden, USA)
A Systematic Study of Compositional Characterization Techniques on Hydrogenated Amorphous Silicon-Germanium Alloys
TuP7.16
Shu-Ya Lin (Hsinchu, Taiwan)
The Vibrational Local Modes of the Metastable Three-Fold Coordinated Oxygen in Hydrogenated Amorphous Silicon Oxide


Wednesday, August 25

Session A - Growth Mechanisms - Ballroom 1
9:00 a.m. - Invited
WA1.1 - Michio Kondo, Makoto Fukawa, Lihui Guo and Akihisa Matsuda (Tsukuba, Japan)
High Rate Growth of Microcrystalline Silicon at Low Temperatures
9:40 a.m.
WA1.2 - J. Robertson (Cambridge, UK)
Growth Mechanism of Hydrogenated Amorphous Silicon
10:00 a.m.
WA1.3 - Yoshirou Okazaki, Seiichi Miyazaki and Masataka Hirose (Hiroshima, Japan)
Infrared Attenuated-Total-Reflection Spectroscopy of Microcrystalline Silicon Growth
10:20 a.m.
WA1.4 - D. Comedi, F. Dondeo Origo, I. Chambouleyron, Z.L. Peng and P. Mascher (Campinas, Brazil)
Compact Hydrogenated Amorphous Germanium Films By Ion-Beam Sputtering Deposition

Session B - Optical Properties of Chalcogenides - Ballroom 2
9:00 a.m.
WB1.1 - V. Tikhomirov, A. Tookey, X. Liu, S. Shen, A. Jha, A. Kar and B. Wherett (Leeds, UK)
Ultrafast Non-Linear Refraction at 1.3-1.5 Micron in Germanium Sulfide and Tellurium Oxide Based Glasses
9:20 a.m.
WB1.2 - O. Matsuda, Y. Saitoh, K. Yamagata, Y. Wang, K. Inoue and K. Murase (Sapporo, Japan)
Temperature Dependence of Photoluminscence Intensity and Decay in GeSe2 Glass
9:40 a.m.
WB1.3 - G. Dale, R.M. Langford, P.J.S. Ewen and C.M. Reeves (Edinburgh, UK)
Fabrication of Photonic Band Gap Structures in As2S3 by Focused Ion-Beam Milling
10:00 a.m. - Invited
WB1.4 - S.G. Bishop (Urbana, USA)
Excitation of Rare Earth Emission in Chalcogenide Glasses by Broadband Urbach Edge Absorption: Native Defects Revisited

Session C - Defects in Silicon and Germanium - Ballroom 3
9:00 a.m.
WC1.1 - Mihail P. Petkov, Marc H. Weber, Kelvin G. Lynn, Richard S. Crandall and Vinita J. Ghosh (Pullman, USA)
Defect Spectroscopy in Hydrogenated Amorphous Silicon Using Positrons
9:20 a.m.
WC1.2 - F.C. Marques and P.C. Taylor (Salt Lake City, USA)
Optically Excited Paramagnetic Centers in Amorphous Hydrogenated Germanium
9:40 a.m.
WC1.3 - S. Ishii, M. Kurihara, T. Aoki, K. Shimakawa and J. Singh (Atsugi, Japan)
Photoluminescence in High-Quality a-Ge:H
10:00 a.m.
WC1.4 - I. Chambouleyron, D. Comedi, G. Dalba, P. Fornasini, R. Grisenti and F. Rocca (Campinas, Brazil)
Local Coordination and Electronic Doping of Column III Metals in Hydrogenated Amorphous Germanium
10:20 a.m.
WC1.5 - V. Nadazdy, R. Durny, E. Pincik, I. Thurzo, M. Kumeda and T. Shimizu (Kanazawa, Japan)
Spatial Distribution of Dangling Bonds In Undoped Hydrogenated Amorphous Silicon Observed By Solid-State Voltcoulometry

10:40
BREAK

Session A - Light Induced Structural Changes - Ballroom 1
11:10 a.m. - Invited
WA2.1 - Shuichi Nonomura, Tamihiro Gotoh, Tomonari Sakamoto, Michio Kondo, Akihisa Matsuda and Shoji Nitta (Gifu, Japan)
The Light Induced Metastable Lattice Expansion In Hydrogenated Amorphous Silicon
11:50 a.m.
WA2.2 - Xiao Liu, C.L. Spiel, R.O. Pohl, E. Iwaniczko and R.S. Crandall (Ithica, USA)
Low Temperature Internal Friction Study of Light-Induced Structural Instability in Amorphous and Microcrystalline Silicon
12:10 p.m.
WA2.3 - E. Stratakis, E. Spanakis, H. Fritzsche and P. Tzanetakis (Heraclion, Greece)
Stress and Internal Friction Associated with Light Induced Structural Changes of a-Si:H Deposited on Crystalline Silicon Microcantilevers

Session B - Thin Film Transistors on Flexible Substrates - Ballroom 2
11:10 a.m.
WB2.1 - Helena Gleskova, Sigurd Wagner and Zhigang Suo (Princeton, USA)
a-Si:H TFTs Under Very High Strain
11:30 a.m.
WB2.2 - Ming Wu, Yu Chen, Kiran Pangal, James C. Sturm and Sigurd Wagner (Princeton, USA)
High-Performance Polysilicon Thin Film Transistors on Steel Substrates
11:50 a.m.
WB2.3 - Hamide Kavak, Carl Gruber, Howard Shanks, Allen Landin, Alan Constant and Stanley Burns (Adana, Turkey)
Characterization of Thin Film Transistors on Polyimide Substrates
12:10 p.m.
WB2.4 - A. Sazonov, D. Striakhilev, and A. Nathan (Waterloo, Canada)
Materials Optimization for TFTs Fabricated at Low Temperature on Plastic Substrates

Session C - Optical Properties of Nanotextured Films - Ballroom 3
11:10 a.m.
WC2.1 - A.S. Ferlauto, Xiao Dong, Joohyun Koh, P.I. Rovira, C.R. Wronski, R.W. Collins and Gautam Ganguly (University Park, USA)
Modeling the Dielectric Function of Silicon Films in the Amorphous, Nanocrystalline, and Microcrystalline Regimes
11:30 a.m.
WC2.2 - P.I. Rovira, A.S. Ferlauto, Joohyun Koh, C.R. Wronski and R.W. Collins (University Park, USA)
Optics of Textured Amorphous Silicon Surfaces
11:50 a.m.
WC2.3 - A. Poruba, A. Fejfar, O. Salyk, M. Van ek and J. Ko ka (Prague, Czech Republic)
Surface and Bulk Light Scattering in Microcrystalline Silicon for Solar Cells
12:10 a.m.
WC2.4 - H. Touir, R. Brenot, P. Roca i Cabarrocas and J.-F. Morhange (Palaiseau, France)
Detailed Analysis of the Relation Between the Optical Absorption and Structural Properties of Hydrogenated Microcrystalline Silicon Films

1:30 p.m.
CONFERENCE EVENT


Thursday, August 26
Session A - Amorphous to Microcrystalline Transistions - Ballroom 1
9:00 a.m. - Invited
ThA1.1 - P. Roca i Cabarrocas (Palaiseau, France)
Plasma Enhanced Chemical Vapor Deposition of Amorphous, Polymorphous, and Microcrystalline Silicon Films
9:40 a.m.
ThA1.2 - Joohyun Koh, A.S. Ferlauto, P.I. Rovira, R.J. Koval, C.R. Wronski and R.W. Collins (University Park, USA)
Evolutionary Phase Digrams For The Deposition of Silicon Thin Films
10:00 a.m.
ThA1.3 - T. Kamiya, K. Nakahata, C.M. Fortmann and I. Shimizu (Yokohama, Japan)
Structural Properties of Polycrystalline Silicon Films Having Varied Textures Fabricated with Intentional Control of Surface Reactions Using SiF4H2/SiH4 Mixing Gas
10:20 a.m.
ThA1.4 - E. Vallat-Sauvain, U. Kroll, J. Meier and A. Shah (Neuchatel, Switzerland)
Surface Roughness and Microstructure of Microcrystalline Silicon Deposited by VHF-GD (Very High Frequency Glow Discharge)

Session B - Sensor Arrays - Ballroom 2
9:00 a.m.
ThB1.1 - Martin Hoheisel and Lothar B„tz (Erlangen, Germany)
Requirements on Amorphous Semiconductors For Medical X-Ray Detectors
9:20 a.m.
ThB1.2 - D. Knipp, P.G. Herzog, H. Stiebig and F. K”nig (Juelich, Germany)
Multi-Channel Sensors with Reduced Metameric Errors
9:40 a.m.
ThB1.3 - Safa O. Kasap and John A. Rowland (Saskatoon, Canada)
Why is a-Se Used in Recent Flat Panel X-Ray Image Detectors?
10:00 a.m. - Invited
ThB1.4 - Markus Böhm (Siegen, Germany)
Imagers Using Amorphous Silicon Thin Films on ASIC (TFA) Technology

Session C - Molecular Dynamics and Simulations - Ballroom 3
9:00 a.m.
ThC1.1 - Peter A. Fedders (St. Louis, USA)
A Molecular Dynamics Study of the Structure of Band Tail States in a-Si:H
9:20 a.m.
ThC1.2 - K. Kohary, I. Laszlo and S. Kugler (Budapest, Hungary)
Formation of Amorphous Carbon Structure: Tight-Binding Molecular Dynamics Study
9:40 a.m.
ThC1.3 - P.M. Voyles, M.M.J. Treacy and J.M. Gibson (Urbana, USA)
Topological and Real Space Analysis of Paracrystalline Models of Tetrahedral Amorphous Semiconductors: Differences in Medium Range Order
10:00 a.m.
ThC1.4 - Giulia Galli, Francois Gygi and Alessandra Catellani (Livermore, USA)
Quantum Mechanical Simulations of Micro-Fracture in an Amorphous Semiconductor
10:20 a.m.
ThC1.5 - Rainer Haerle, Giulia Galli and Alfonso Baldereschi (Lausanne, Switzerland)
Structural Models of Pure Amorphous Carbon Surfaces

10:40 a.m.
BREAK

Session A - Luminescence of Hydrogenated Amorphous Silicon and Alloys - Ballroom 1
11:10 a.m.
ThA2.1 - R. Rizzoli, C. Summonte, P. Rava, G. Barucca, A. Desalvo, F. Giorgis and C.F. Pirri (Bologna, Italy)
a-SiN:H Mulitlayer Versus Bulk Structure: A Real Improvement of Radiative Efficiency
11:30 a.m.
ThA2.2 - K. Murayama, N. Katagiri, K. Ouno, S. Miyazaki and M. Hirose (Tokyo, Japan)
Thermalization Gaps of a-Si:H Well Layers in a-Si:H/a-Si3N4:H Multilayers
11:50 a.m.
ThA2.3 - Hidetoshi Oheda (Tsukuba, Japan)
Selective Dominance of Photoluminescence Lifetime in a-Si:H Based Alloys
12:10 p.m.
ThA2.4 - C. Ogihara, H. Takemura, H. Yoshida and K. Morigaki (Ube, Japan)
Lifetime Distribution of Photoluminescence Under Pulsed Excitation in Hydrogenated Amorphous Silicon Based Films

Session B - ESR in Microcrystalline Silicon - Ballroom 2
11:10 a.m. - Invited
ThB2.1 - F. Finger, J. Muller, C. Malten, R. Carius and H. Wagner (Juelich, Germany)
Electron Properties of Microcrystalline Silicon Investigated by Electron Spin Resonance and Transport Measurments
11:50 a.m.
ThB2.2 - M. Vanecek, A. Poruba, J. Springer, J. Rosa, V. Vorlicek, J. Meier and A. Shah Prague, Czech Republic)
ESR and Optical Characterization of Defects in Microcrystalline Silicon
12:10 p.m.
ThB2.3 - P. Kanschat, K. Lips and W. Fuhs (Berlin, Germany)
Identification of Nonradiatve Recombination Paths in Microcrystalline Silicon (mc-Si:H)
Session C - Electronic Properties I - Ballroom 3
11:10 a.m.
ThC2.1 - K. Hattori, T. Hirao, M. Iida and H. Okamoto (Osaka, Japan)
Frequency-Resolved Drift Mobility in a-Si:H
11:30 a.m.
ThC2.2 - B.A. Korevaar, W.M.M. Kessels, A.H.M Smets, H.-Z. Song, G.J. Adriaenssens, M.C.M. van de Sanden and D.C. Schram (Eindhoven, The Netherlands)
High Hole Mobility a-Si:H Deposited at High Growth Rate for Solar Cell Applications
11:50 a.m.
ThC2.3 - Manfred Niehus, Svetoslav Koynov, Tiago M£rias and Reinhard Schwarz (Lisbon, Portugal)
Transient Thermal Gratings and Carrier-Induced Gratings in Diffusion Experiments
12:10 p.m.
ThC2.4 - N. Wyrsch, L. Feitknecht, C. Droz, P. Torres, A. Shah, A. Poruba, and M. Vanecek (Neuchatel, Switzerland)
Hydrogenated Microcrystalline Silicon: How to Correlate Layer Properties and Solar Cell Performance

12:30 p.m.
LUNCH

Session A - Amophous Carbon Alloys - Ballroom 1
2:00 p.m.
ThA3.1 - J.V. Anguita, W.T. Young, and S.R.P. Silva (Guildford, UK)
Photoluminescence and Optical Characterization of Low Defect Density a-C:H:N
2:20 p.m.
ThA3.2 - T. Itoh, M. Aono, S. Yoshida, S. Hattori, K. Katsuno, S. Nitta and S. Nonomura (Gifu, Japan)
Structural Stability for UV Irradiation and Dielectric Properties in a-CNx Films
2:40 p.m.
ThA3.3 - S. Matics and W. Frank (Stuttgart, Germany)
Diffusion of 71Ge in the Amorphous Ceramics Si26C41N33
3:00 p.m. - Invited
ThA3.4 - F. Alvarez (Campinas, Brazil)
Electronic and Structural Properties of Amorphous Carbon-Nitrogen Alloys

Session B - Rigidity Percolation - Ballroom 2
2:00 p.m. - Invited
ThB3.1 - M.F. Thorpe, D.J. Jacobs and N.V. Chybynsky (East Lansing, USA)
Flexible and Rigid Regions in Network Glasses
2:40 p.m.
ThB3.2 - P. Boolchand, D. Selvanathan, Xingwei Feng, W.J. Bresser and B. Goodman (Cincinnati, USA)
Thermally Reversing Window and Stiffness Transitions in Chalcogenide Glasses
3:00 p.m.
ThB3.3 - Y. Wang, M. Nakamura, O. Matsuda and K. Murase (Osaka, Japan)
Raman-Spectroscopy Studies on Rigidity Percolation and Fragility in Ge-(S,Se) Glasses
3:20 p.m.
ThB3.4 - G. Lucovsky and J.C. Phillips (Raleigh, USA)
Application of Constraint Theory to Si-Dielectric Interfaces in a-Si:H and Poly-Si Thin Film Transistors (TFTs)

Session C - Electronic Properties II - Ballroom 3
2:00 p.m.
ThC3.1 - R. Butte, S. Vignoli, M. Meaudre, R. Meaudre, O. Marty and P. Roca i Cabarrocas (Villeurbanne, France)
Structural, Optical and Electronic Properties of Polymorphous Silicon Films
2:20 p.m.
ThC3.2 - R. Bruggemann, J.P. Kleider, C. Longeaud, J. Guillet and J.E. Bouree (Gif-sur-Yvette, France)
Electronic Properties of Silicon Thin Films Prepared by Hot-Wire Chemical Vapour Deposition
2:40 p.m.
ThC3.3 - E. Spanakis, E. Stratakis, N. Kopidakis, P. Tzanetakis and H. Fritzsche (Heraclion, Greece)
Space Charges Resulting from Photocurrents Exceeding the Thermionic Emission Currents in a-Si:H
3:00 p.m.
ThC3.4 - Jonghun Lyou, N. Kopidakis and E.A. Schiff (Syracuse, USA)
Interband and Defect-Related Electromodulation Spectra in a-Si:H
3:20 p.m.
ThC3.5 - Yoram Lubianiker, J. David Cohen, D.L. Williamson, S. Kozlovski, Y. Rosenwaks, Jeffrey Yang and Subhendu Guha (Eugene, USA)
Structural and Electronic Properties of Optimized a-Si:H Films

3:40 p.m.
BREAK

4:00 p.m. POSTERS

P1 - Amorphous Carbon
ThP1.1
Kimon C. Palinginis, J.D. Cohen, A. Ilie, N.M.J. Conway and W.I. Milne (Eugene, USA)
Defect Band Distributions in Thin Film to a-C:H/c-Si Heterostructures
ThP1.2
B. Popescu, C. Verney, E.A. Davis, V. Paret and A. Brunet-Bruneau (Leicester, UK)
Optical Properties of Sputtered Hydrogenated Amorphous Carbon
ThP1.3
Jiafang Du, Yaohui Zhou and Wenji Zhu (Nanjing, China)
Influence of Substrate Bias on the PL of a-C:H Films Prepared by Using an Aromatic Hydrocarbon Source
ThP1.5
M. Benlahsen, B. Racine, M. Clin and K. Zellama (Amiens, France)
Comparative Study of the Effect of the Thermal Annealing on the Hydrogen Bonding and the Stress Behaviour in a-C:H Films Deposited by ECR-RF Glow Discharge and DC Multipolar Plasma Methods
ThP1.6
K. Saitoh, T. Itoh, Y. Katoh, N. Okada, A. Hatta, H. Inomoto, S. Nitta, S. Nonomura and A. Hiraki (Gifu, Japan)
Properties and Electron Field Emission of High Resistive and Transparent Polymer-Like a-C:H
ThP1.7
R.U.A. Khan, J.M. Shannon and S.R.P. Silva (Surrey, UK)
Ion Implatation into Hydrogenated Amorphous Carbon Films
ThP1.8
A. Ilie and J. Robertson (Cambridge, UK)
Photoconductivity and Photoluminescence Processes in Amorphous Carbon
ThP1.9
Haruo Yokomichi and Kazuo Morigaki (Toyama, Japan)
Temperature Dependence of Electron Spin Resonance in Fluorinated Amorphous Carbon Films
ThP1.10
B. Popescu, E.A. Davis, A. Tagliaferro and M.T. Todarello (Leicester, UK)
Hydrogen Incorporation and its Structural Effect on a-C:H Films Deposited by Magnetron Sputtering
ThP1.11
Haruo Yokomichi, Tomihiro Amano, Atsushi Masuda and Hiroyuki Sakima (Toyama, Japan)
Effects of Nitrogen Incorporation on Structural Properties of Fluorinated Amorphous Carbon Films
ThP1.12
A.I. Kosarev, A.N. Andronov, T.E. Felter, A.J. Vinogradov, Z. Waqar, A.N. Titkov, I.V. Makarenko, S.V. Robozerov and M.V. Shutov (St. Petersburg, Russia)
Electron Field Emission from VHF CVD Carbon Films

P2 - Growth and Structure of Silicon
ThP2.1
Ch. Ross, J. Herion and H. Wagner (Juelich, Germany)
Nucleation and Growth Analysis of Microcrystalline Silicon by Scanning Probe Microscopy: Substrate Dependence, Local Structural and Electronic Properties of as-Grown Surfaces
ThP2.2
R. Rogel, M. Sarret, T. Mohammed-Brahim, O. Bonnaud and J.P. Kleider (Rennes, France)
High Quality Un-Hydrogenated LPCVD Polycrystalline Silicon
ThP2.3
R. Terasa, M. Albert, H. Grger, A. Haiduk and A. Kottwiz (Dresden, Germany)
Investigation of Growth Mechanisms of Microcrystalline Silicon in the Very High Frequency Range
ThP2.4
P. Alpuim, V. Chu and J.P. Conde (Lisbon, Portugal)
Deposition of Amorphous and Microcrystalline Silicon Films on Plastic Substrates by Hot-Wire Chemical Vapor Deposition
ThP2.5
Karl Erickson and Vikram L. Dalal (Ames, USA)
Growth of Microcrystalline Si,(Si,Ge) and (Si,C) Films on Plastic Substrates
ThP2.6
Toshiaki Sasaki, Shinji Fujikake, Katsuya Tabuchi, Takashi Yoshida, Toshio Hama, Hiroshi Sakai and Yukimi Ichikawa (Yokosuka City, Japan)
Structural Study of P-Type mc-Si Layer for Solar Cell Applications
ThP2.7
D. Stryahilev, F. Diehl and B. Schroeder (Moscow, Russia)
On the Splitting of SiH Absorption Bands in Infrared Spectra of mc-Si:H
ThP2.8
Namiko Honda, Atsushi Masuda and Hideki Matsumura (Ishikawa, Japan)
Transport Mechanism of Deposition Precursors in Catalytic CVD Studied by a Reactor Tube
ThP2.9
Katsuya Abe, Takeshi Tsushima, Mitsuru Ichikawa, Akira Yamada and Makoto Konagai (Tokyo, Japan)
Comparison of Gas-Phase Reactions in Low-Temperature Growth of Si Thin Films by Photo-CVD and Hot Wire Cell Methods
ThP2.10
N. Sakamoto and Y. Ohmura (Fukushima, Japan)
Post Hydrogenation of Sputtered Amorphous Silicon by Pressurized Water Boiling

P3 - Devices
ThP3.1
W. Gao, S.H. Lee, D.K. Benson and H.M. Branz (Golden, USA)
Novel Projection and Writing Device from a-SiC:H and Electrochromics
ThP3.2
Domenico Caputo, Giampiero de Cesare, Fernanda Irrera and Fabrizio Palma (Rome, Italy)
On the Relation Between Defect Density and Dopant Concentration in Amorphous Silicon Films
ThP3.3
K. Ro, K. Nakahata, T. Kamiya, C.M. Fortmann and I. Shimizu (Yokohama, Japan)
Microstructure and Photovoltaic Properties of Low Temperature Polycrystalline Silicon Solar Cells Fabricated by VHF-GD CVD Using Fluorinated Gas
ThP3.4
R.K Onmori, E.A.T. Dirani, R.M. Faria and A.M. Andrade (Sao Paulo, Brazil)
Study of Photovoltaic Effect on mc-Si:H(n+)/ Poly(o-Methoxyaniline)/ a-Si:H(p) Structures
ThP3.5
R. Martins, E. Fortunato, I. Ferreira, V. Silva and C. Ruas (Monte de Caparica, Portugal )
Improvement of a-Si:H Device Stability by Proper Design of the Interfaces
ThP3.6
Domenico Caputo, Giampiero de Cesare, Rosario De Rosa, Francesco Roca and Mario Tucci (Rome, Italy)
Amorphous Silicon p-i-n on P Crystalline Silicon Photodetector in the Visable and Near Infrared Spectrum
ThP3.7
Y. Poissant and P. Roca i Cabarrocas (Palaiseau, France)
Optimizing Phosphorous and Boron Doped Layers for Stable p-i-n Solar Cells
ThP3.8
Wei Guang-Pu, Hiroaki Okamoto and Yoshihiro Hamakawa (Shanghai, China)
Amorphous Silicon X-Ray Sensor
ThP3.9
Frank Blecher, Andreas Eckhardt, Bernd Schneider, Jurgen Sterzel and Markus Bohm (Siegen, Germany)
Noise Analysis of Imagers with a-Si:H pin Diode Pixels
ThP3.10
S.M. Manakov (Almaty, Kazakstan)
Optoelectronic Properties of a-Si:H Prepared by Magnetron Method and Optimization of Solar Cells
ThP3.11
F. Lemmi (Palo Alto, USA)
Modeling of Effects of Material Quality on Fast Characterization of State-of-the-Art a-Si:H p+-i-n+ Diodes
ThP3.12
A. Nascetti, D. Caputo and F. Palma (Rome, Italy)
Noise Model of a-Si:H IR Photodetectors
ThP3.13
M. Balucani, D. Caputo, G. de Cesare, G. Lamedica and A. Ferrari (Rome, Italy)
Optical Link for Digital Transmissions Using Porous Silicon Light Emitting Diodes
ThP3.14
Janez Krc, Marko Topic and Franc Smole (Ljubljana, Slovenia)
Optical Modelling of a-Si:H-Based Three-Terminal Three-Color Detectors
ThP3.15
P. Rieve, M. Sommer, M. Wagner, K. Seibel and M. B”hm (Siegen, Germany)
a-Si:H Color Imagers and Colorimetry
ThP3.16
J. Hu, A.J. Snell, J. Hajto, M.J. Rose and W. Edmonston (Edinburgh, UK)
Investigation of Durability of Cr/p+ a-Si:H/V Thin Film Memory Devices
ThP3.17
Ch. Hof, N. Hyrsch and A. Shah (Neuchatel, Switzerland)
Influence of Electric Field Distortion and I-Layer Quality on the Collection Function of Drift-Driven a-Si:H Solar Cells

P4 - Electronic Transport
ThP4.1
Mehmet Gunes, R.E. Johanson and S.O. Kasap (Izmir, Turkey)
Conductance Fluctuations in Undoped Hydrogenated Amorphous Silicon Thin Films Prepared Using Different Deposition Techniques
ThP4.2
T. Smail, M. Aoucher and T. Mohammed-Brahim (Alger, Algeria)
Numerical Simulation of a Low-Field Thermally Stimulated Conductivity in a-Si:H
ThP4.3
S. Grabtchak, C. Main and S. Reynolds (Toronto, Canada)
Interpreting Transient Photocurrents as a Signature of the Density of States Distribution: The Profound Importiance of the Short-Time Decay
ThP4.4
Kazuro Murayama, Miwa Ashikawa and Ryo Ikeuchi (Tokyo, Japan)
Dispersive Transient Current Due to Hopping on Band Edge Fluctuating With Self-Affine Fractal Dimension
ThP4.5
Alfredo Rubbino, Paola delli Veneri, Vera La Ferrara, Rosario De Rosa and Mario Tucci (Portici, Italy)
Amorphous Porous Heterojunction on Thin Microcrystalline Silicon
ThP4.6
C. Niikura, J. Guillet, J.E. Bour‚e, C. Voz, D. Peiro, J.M. Asensi, J. Bertomeu and J. Andreu (Palaiseau, France)
Comparative Study of Electronic and Optical Properties of Microcrystalline Silicon Films Deposited by High Vacuum and Ultra-High Vacuum Hot-Wire CVD
ThP4.7
K. Nakahata, T. Kamiya, C.M. Fortmann, I. Shimizu, H. Stuchlikov , A. Fejfar and J. Kocka (Yokohama, Japan)
Anisotropic Carrier Transport in Preferentially Oriented Polycrystalline Silicon Films Fabricated by VHF-GD CVD Using Fluorinated Source Gas
ThP4.8
Shaoyun Huang, Li Wang, Guatam Ganguly, Jun Xu, Xinfan Huang, Akihisa Matsuda and Kunji Chen (Nanjing, China)
The Changing of Transport Mechanism in mc-Si:H Thin Films Induced by H2 Diluted Silane Plasma
ThP4.9
I.A. Shkrob and R.A. Crowell (Argonne, USA)
Ultrafast UV Pump- IR Probe Laser Spectroscopy of a-Si:H
ThP4.10
Daxing Han, H. Habuchi, T. Hori, Jing Lin and Guozhen Yue (Chapel Hill, USA)
Optical and Electronic Properties of Microcrystalline Silicon Films
ThP4.11
E. Morgado, J. D¡ez, R. Schwarz, A. Ma‡arico, S. Koynov (Lisbon, Portugal)
New Results on the Modulated Photocarrier Grating Technique
ThP4.12
Nobuyuki Ogawa, Takashi Nagase and Hiroyoshi Naito (Osaka, Japan)
Improvement of Energy Resolution of Transient Photoconductivity Analysis for Measuring Localized-State Distributions in Amorphous Semiconductors
ThP4.13
J. Hajto, A.J. Snell, J. Hu, M.J. Rose and K. Turvey (Edinburgh, UK)
DC and AC Measurements on Metal/a-Si:H/Metal Room Temperature Quantized Resistance Devices

P5 - Chalcogenide Glasses II
ThP5.1
M. Frumar, J. Jedelsky, Z. Cernosek and T. Wagner (Pardubice, Czech Republic)
Optically Induced Structural Changes in As2S3-Sb2S3 System Films
ThP5.2
P. Hari, T. Su, P.C. Taylor, P.L. Kuhns, W.G. Moulton and N.S. Sullivan (Nashville, USA)
Photodarkening In Glassy As2S3 Studied by High Field NMR
ThP5.3
Vladimir Arkhipov and Safa Kasap (Saskatoon, Canada)
Is There Avalanche Multiplication in Amorphous Semiconductors?
ThP5.4
A.V. Stronski, M. Vlcek, A. Sklenar, P.E. Shepeljavi, S.A. Kostyukevich and T. Wagner (Kiev, Ukraine)
Application of aS40S60-xSex Layers for High Efficiency Gratings Production
ThP5.5
K. Sakai, T. Uemoto, H. Yokoyama, A. Fukuyama, K. Yoshino, T. Ikari and K. Maeda (Miyazaki, Japan)
Annealing Time and Temperature Dependance for Photo-Induced Crystallization in Amorphous GeSe2
ThP5.6
Peter Sharlangjiev, Victor Boev and Maria Mitkova (Sofia, Bulgaria)
Optical Constants and Photoinduced Changes in Ge-Se-AgI Thin Films in the Visible and NIR
ThP5.7
M. Vlcek, A.V. Stronski, A. Sklenar, T. Wagner and S.O. Kasap (Pardubice, Czech Republic)
Imaging Properties of As40S60-xSex Layers as a Function of Their Composition
ThP5.8
K. Matsuishi, R. Arima, K. Kagota and S. Onari (Tsukuba, Japan)
Anisotropic Structural Change Induced by Sub-Bandgap Light in As-S Glasses Studied by Low-Frequency Raman Scattering
ThP5.9
R. Tomova, R. Stoycheva-Topalova and A. Buroff (Sofia, Bulgaria)
Copper-Doped Vacuum Evaporated Chalcogenide Layers as Sensitive Ion-Selective Membranes
ThP5.10
T. Wagner and P.J.S. Ewen (Pardubice, Czech Republic)
Photo-Induced Dissolution Effect in Ag/As33S67 Multilayer Structure and its Potential Application
ThP5.11
L.A. Kulakova, B.A. Matveev and B.T. Melekh (St. Petersburg, Russia)
Si-Te Acoustooptic Modulator for (1.7 m-10.6m) IR-Region
ThP5.12
I.Z. Indutnyi, P.F. Romanenko and M.V. Sopinski (Kiev, Ukraine)
Formation of Blazed Diffraction Gratings Using Light Sensitive Chalcogenide Layers

P6 - Defects in Silicon and Germanium
ThP6.1
Takashi Ehara, Tadaaki Ikoma and Shozo Tero-Kubota (Miyagi, Japan)
Multi-Band Electron Paramagnetic Resonance Study of the Defects in Microcrystalline Silicon
ThP6.2
R. Muller, P. Kanschat, K. Lips and W. Fuhs (Berlin, Germany)
Indentification of Recombination Centers in Homo- and Heterojunction Silicon Solar Cells by Electron Spin Resonance
ThP6.3
Sergei Kuznetsov (Moscow, Russia)
Independence of Photoconductivity of P-Type a-Si:H Films on Doping Level and Defect Concentration
ThP6.4
F.T. Reis, D. Comedi and I. Chambouleyron (Campinas, Brazil)
Temperature Dependence of the Photoconductivity of Gallium-Doped Hydrogenated Amorphous Germanium Thin Films
ThP6.5
Michio Kondo, Satoshi Yamasaki and Akihisa Matsuda (Tsukuba, Japan)
Microscopic Structure of Defects in Microcrystalline Silicon
ThP6.6
J.K. Rath, A. Barbon and R.E.I. Schropp (Utrecht, The Netherlands)
Clustered Defects in Hot-Wire CVD Poly-Silicon Films
ThP6.7
Jeremy Theil, Dale Lefforge, Gerrit Looi, Min Cao and Gary Ray (Palo Alo, USA)
Recent Results on Low-Level B Doping of a-Si:H

P7 - Theory and Simulation
ThP7.1
R.M. Valladares, Fernando Alverez, Alexander Valladares and Ariel A. Valladares (Mexico, Mexico)
Ab Initio Studies of the Role of Hydrogen in a-Si and a-Ge
ThP7.2
M. Fyta and P.C. Kelires (Heraclion, Greece)
Stress Variations Near Surfaces in Diamond-Like Amorphous Carbon
ThP7.3
H. Touir and P. Roca i Cabarrocas (Palaiseau, France)
Thermodynamic Model of the Amorphous-Microcrystalline Silicon Transition at Low Temperature
ThP7.4
S.M. Nakhmanson and D.A. Drabold (Athens, USA)
Computer Simulation of Low Energy Excitations in Amorphous Silicon
ThP7.5
Y-P. Li, B.C. Pan and R. Biswas (Ames, USA)
Isotopic Effect Between Deuterium and Hydrogen Emission in Silicon
ThP7.6
C. Mathioudakis and P.C. Kelires (Heraclion, Greece)
Softening of Elastic Moduli of Amorphous Semiconductors
ThP7.7
D.M. Goldie (Dundee, UK)
The Influence of Spatial Disorder on the Mobility of Charge Carriers Hopping Through Energetically Disordered Dipolar Lattices
ThP7.8
K. Omata and F. Yonezawa (Kawasaki, Japan)
Theoretical Approach to the Photoluminescence Mechanism in Silicon Nanocrystals

8:00 p.m.
BANQUET


Friday, August 27

Session A - Hydrogen and Metastability - Ballroom 1
9:00 a.m. - Invited
FA1.1 - Howard M. Branz (Golden, USA)
Hydrogen Collision Model of the Metastability in Amorphous Silicon: Theory and Experiment
9:40 a.m.
FA1.2 - P. Stradins, M. Kondo and A. Matsuda (Tsukuba, Japan)
A Study of Light-Induced Degradation of a-Si:H by Nanosecond Laser Pulse Pairs of Variable Delay
10:00 a.m.
FA1.3 - K. Morigaki and H. Hikita (Hiroshima, Japan)
Model of the Light-Induced Creation of Two Types of Dangling Bonds in a-Si:H
10:20 a.m.
FA1.4 - N. Kopidakis and E.A. Schiff (Syracuse, USA)
Hydrogen-Mediated Model for Metastability in a-Si:H: Role of Dihydride Bonding

Session B - Hybrid Optical Devices - Ballroom 2
9:00 a.m.
FB1.1 - F. Wongwan, T. Chutarasok, K. Chirakawikul, D. Kruangam and S. Panyakeow (Bangkok, Thailand)
Amorphous Photocoupler Consisting of a-SiC:H Thin Film LED and a-SiGe:H Thin Film Photodiode
9:20 a.m.
FB1.2 - W. Gao, P. Liu, S.H. Lee, D.K. Benson and H.M. Branz (Golden, USA)
Large-Area Approaches for a-SiC:H Photovoltaic-Powered Electrochromic Window Coatings
9:40 a.m.
FB1.3 - Rhonda Gaede, Fenglei Li, David Hyde and Dashen Shen (Huntsville, USA)
Amorphous Silicon Photodetector for Optical Interconnections
10:00 a.m.
FB1.4 - G. Cocorullo, F.G. Della Corte, R. DeRosa, I. Rendina, A. Rubino and E. Terzini (Naples, Italy)
Fast Light Switching in a-Si:H-Based Micro-Optic Device for Fiber-in-the-Loop Applications
10:20 a.m.
FB1.5 - M. Vieira, A. Fantoni, M. Fernandes, A. Mar‡arico and R. Schwarz (Lisbon, Portugal)
A 3-Phase Model for VIS/NIR mc-Si:H p-i-n Detectors

Session C - Electronic Transport in Microcrystalline Silicon - Ballroom 3
9:00 a.m.
FC1.1 - C. Droz, M. Goerlitzer, N. Wyrsch and A. Shah (Neuchatel, Switzerland)
Electronic Transport in Hydrogenated Microcrystalline Silicon: Similarities with Amorphous Silicon
9:20 a.m.
FC1.2 - T. Unold, R. Brggemann and G.H. Bauer (Oldenburg, Germany)
Anisotropy in the Transport in Microcrystalline Silicon
9:40 a.m.
FC1.3 - J. Kocka, H. Stuchlikova, V. Svrcek, P. Fojtik, I. Pelant and A. Fejfar (Prague, Czech Republic)
A.C. Conductivity - The Tool for Test of Transport Anisotropy of mc-Si:H
10:00 a.m.
FC1.4 - G. Juska, K. Genevicius, K. Arlauskas, H. Stuchl¡kova, A. Fejfa and, J. Koaka (Prague, Czech Republic)
New Method of Drift Mobility Evaluation in mc-Si:H: Basic Idea and Comparison with Time of Flight
10:20 a.m.
FC1.5 - R. Brenot, R. Vanderhaghen, B. Dr‚villon and P. Roca i Cabarrocas (Palaiseau, France)
Real-Time Measurments of Transverse Ambipolar Diffusion Coefficient in Microcrystalline Silicon

10:40 a.m.
BREAK

Session A - Crystallization - Ballroom 1
11:10 a.m.
FA2.1 - P. Lengsfeld, N.H. Nickel and W. Fuhs (Berlin, Germany)
The Role of Hydrogen In the Process of Successive Laser Crystallization of Hydrogenated Amorphous Silicon
11:30 a.m.
FA2.2 - J. Gerbi and J.R. Abelson (Urbana, USA)
Surface Vs. Subsurface Particle Bombardment Effects in the Formation of Microcrystalline Silicon
11:50 a.m.
FA2.3 - Cheol-Min Park, Kee-Chan Park and Min-Koo Han (Seoul, Korea)
A Gradual Excimer Laser Energy Modulation Method of Poly-Si Thin Film on Stepped Trench Wall Substrate
12:10 p.m.
FA2.4 - Xinfan Huang, Li Wang, Jian Li, Wei Li, Ming Jiang, Jun Xu and Kunji Chen (Nanjing, China)
Three-Dimensional Ordered Nano-Crystalline Si Made by Pulsed Laser Interference Crystallization of a-Si:H/a-SiNx:H Multilayers

Session B - Photoinduced Anisotropy of Chalcogenides - Ballroom 2
11:10 a.m.
FB2.1 - P. Krecmer, M. Vlcek, S. Sklenar and S.R. Elliott (Cambridge, UK)
Reversed Vectoral Photoinduced Anisotropy in Chalcogenide Glasses
11:30 a.m.
FB2.2 - T. Gotoh, H. Hayakawa and K. Tanaka (Sapporo, Japan)
Photoinduced Anisotropy in Ion-Conducting Amorphous Semiconductor Ag-As-S
11:50 a.m.
FB2.3 - P. Hertogen and G.J. Adriaenssens (Leuven, Belgium)
Influence of Temperature, Light Intensity and Electrical Field on the Photoinduced Dichroism in Chalcogenide Thin Films
12:10 p.m.
FB2.4 - E.V. Emelianova, P. Hertogen, V.I. Arkhipov and G.J. Adriaenssens (Leuven, Belgium)
A Model of Photoinduced Anisotropy in Chalcogenide Glasses

Session C - Noize in Hydrogenated Amorphous Silicon - Ballroom 3
11:10 a.m.
FC2.1 - D. Quicker and J. Kakalios (Minneapolis, USA)
Long Range Disorder and Metastability in Amorphous Silicon
11:30 a.m.
FC2.2 - P.A.W.E. Verleg and J.I. Dijkhuis (Utrecht, The Netherlands)
Generation-Recombination Noise Studied in Hydrogenated Amorphous Silicon
11:50 a.m.
FC2.3 - S.T.B. Goennenwein, M.W. Bayerl, M.S. Brandt and M. Stutzmann (Garching, Germany)
Intrinsic a-Si:H Studied with Noise-Detected Magnetic Resonance
12:10 p.m.
FC2.4 - Robert E. Johanson and S.O. Kasap (Saskatoon, Canada)
1/f Noise in Doped and Undoped a-Si:H

12:30 p.m.
CLOSING REMARKS
J. Kocka (Prague, Czech Republic)